Samsung - DDR4 - Modul - 128 GB - LRDIMM 288-polig - 3200 MHz / PC4-25600 1.2 V Load-Reduced ECC

For data centers and high-performance computing environments where memory density and reliability are non-negotiable, this Samsung 128GB LRDIMM stands apart from typical RDIMMs by using load-reduced technology to minimize bus loading and enable higher capacities per channel. Built on Samsung's advanced DRAM process, the M386AAG40BM3-CWE delivers quad-rank 128GB capacity at 3200MHz with ECC, making it a cornerstone for virtualization, in-memory databases, and large-scale server deployments.

Highlights

• Massive 128GB capacity in a single module – quadruple the density of standard 32GB DIMMs
• Load-Reduced DIMM (LRDIMM) architecture reduces electrical load on the memory bus, allowing more modules per server
• DDR4-3200 (PC4-25600) speed with CL22 latency balances high bandwidth and low power
• ECC (Error-Correcting Code) detects and corrects single-bit errors, ensuring data integrity for mission-critical workloads
• Quad-rank (4Rx4) design with 288-pin form factor, compliant with JEDEC standards for seamless integration
• Low 1.2V operating voltage improves energy efficiency compared to previous-generation DDR3

In daily use

Deploying this module in a server or workstation immediately expands memory headroom for demanding applications such as SAP HANA, VMware ESXi, or large-scale analytics. The load-reduced design allows you to populate all memory channels without sacrificing speed, so you can achieve maximum memory bandwidth and capacity simultaneously. Because it's ECC registered, it provides an extra layer of protection against data corruption, which is essential for financial transactions, scientific computing, and 24/7 operations. The 3200MHz speed ensures smooth multitasking and fast data access, while the 1.2V power envelope keeps thermal and energy costs in check.

Full specifications

• Brand: Samsung
• Model: M386AAG40BM3-CWE
• Memory Capacity: 128 GB
• Memory Type: DDR4 SDRAM
• Module Type: LRDIMM (Load-Reduced DIMM)
• Form Factor: 288-pin DIMM
• Memory Speed: 3200 MHz (PC4-25600)
• Voltage: 1.2 V
• Error Correction: ECC
• Buffering Type: Load-Reduced
• Rank: Quad Rank (4Rx4)
• CAS Latency: CL22
• Module Configuration: 1 x 128 GB
• Application: Server / Workstation
• Compatibility: Designed for servers and high-performance workstations requiring LRDIMM memory

Final note

When you need uncompromising capacity and reliability, the Samsung M386AAG40BM3-CWE is the professional choice for scaling your memory-intensive infrastructure without compromise.